|
Nand Flash |
|||||
|
4G
bit Nand Flash SLC |
MT29F4G16ABBDAH4-IT:D |
Micron |
10000 @ |
USD4.10 |
2 days |
|
1G
bit Nand Flash SLC |
MT29F1G08ABAEAWP:E |
Micron |
20160 @ |
Call |
3 days |
|
Flash Memory [NAND /NOR] |
|||||
|
1Mb
Serial NOR Flash |
M25P10-AVMN6TP |
Micron |
10000 @ |
Bid |
1 day |
|
128Mb
Serial Flash Memory |
MT25QL128ABA1EW9-0SIT |
Micron |
7680 @ |
Bid |
1 day |
|
128Mbit
NOR Flash 133MHZ 16SOIC |
MT25QL128ABA8ESF-0SIT |
Micron |
20000 @ |
Call |
Stock HK |
|
2Mb
Serial Nor Flash 2.7V-3.6V |
M25PE20-VMN6TP |
Micron |
12500 @ |
Call |
1 day |
|
MCP ( NAND / DRAM ) |
|||||
|
EMCP
eMMC 16GB LPDDR3 8Gb MV1608 |
KMFE60012M-B214 |
Samsung |
1000 @ |
Call |
5 days |
|
Embedded MMC |
|||||
|
4GB
e-MMC Ver 5.0 |
THGBMDG5D1LBAIT |
Toshiba |
13440 @ |
Call |
3 days |
|
4GB
eMMC |
MTFC4GLDEA-0M
WT |
Micron |
10000 @ |
Bid |
27 Feb |
|
4GB
e-MMC 5.0 |
MTFC4GACAJCN-1M
WT |
Micron |
7600 @ |
Call |
3 days |
|
4GB
e-MMC ver 5.0 MLC |
KLM4G1FEPD-B031 |
Samsung |
8000 @ |
Call |
Stock HK |
|
NOR Flash |
|||||
|
256Mbit
Serial NOR Flash 3V, Multiple I/O |
MT25QL256ABA8ESF-0SIT |
Micron |
10000 @ |
Call |
1 day |
Dram
|
Mobile DDR |
|||||
|
Mobile
DDR 32Mx16-333 |
H5MS5162FFR-J3M |
Hynix |
10080 @ |
Call |
2 days |
|
LPDDR3
256Mx32 PC1866 |
MT52L256M32D1PF-107
WT:B |
Micron |
10000 @ |
USD9.50 |
2 days |
|
DDR4 |
|||||
|
DDR4
256Mx16 PC2400 |
MT40A256M16GE-083E:B |
Micron |
2000 @ |
USD4.00 |
4 days |
|
DDR4
1Gx8 PC2400 |
H5AN8G8NAFR-UHC |
Hynix |
30000 @ |
Call |
2 days |
|
DDR4
512Mx16 PC2400 |
MT40A512M16JY-083E:B |
Micron |
4000 @ |
Call |
3 days |
|
DDR4
512Mx8 PC2400 |
H5AN4G8NAFR-UHC |
Hynix |
19200 @ |
Call |
1 day |
|
DDR4
512Mx8 PC2133 |
H5AN4G8NAFR-TFC |
Hynix |
30000 @ |
Call |
2 days |
|
DDR3 |
|||||
|
DDR3
256Mx16 PC2133 |
MT41K256M16LY-093:N |
Micron |
6000 @ |
Call |
3 days |
|
DDR3
1Gx8 PC1600 |
MT41K1G8SN-125:A |
Micron |
6000 @ |
Call |
3 days |
|
DDR3
512Mx8 PC1866 |
MT41K512M8RG-107:N |
Micron |
10000 @ |
Call |
3 days |
|
DDR3
256Mx16 PC1866 |
MT41K256M16TW-107:P |
Micron |
20000 @ |
USD3.45 |
3 days |
|
DDR3
512Mx16 PC1600 |
H5TC8G63CMR-PBA |
Hynix |
4800 @ |
Call |
booking |
|
DDR3
512Mx8 PC1600 1.35v |
K4B4G0846E-BYK0 |
Samsung |
20480 @ |
Call |
1 day |
|
DDR3
256Mx16 PC1600 |
K4B4G1646E-BYK0 |
Samsung |
22400 @ |
Call |
Stock HK |
|
DDR3
64Mx16 PC1866 |
MT41K64M16TW-107:J |
Micron |
4000 @ |
USD1.60 |
3 days |
|
DDR3
256Mx16 PC1600 |
K4B4G1646E-BMK0 |
Samsung |
10080 @ |
Bid |
4 days |
|
DDR3
256Mx8 PC1600 |
K4B2G0846F-BYK0 |
Samsung |
20480 @ |
Call |
1 day |
|
DDR3
128Mx16 PC1600 ind temp |
MT41K128M16JT-125
IT:K |
Micron |
2000 @ |
Call |
Stock HK |
|
DDR3
64Mx16 PC1600 |
K4B1G1646I-BCK0 |
Samsung |
11200 @ |
Call |
1 day |
|
DDR2 |
|||||
|
DDR2
128Mx16 PC800 Pb free |
MT47H128M16RT-25E:C |
Micron |
6000 @ |
Call |
3 days |
|
DDR2
64MX16 PC800 FBGA |
MT47H64M16NF-25E:M |
Micron |
10000 @ |
USD1.35 |
1 day |
|
DDR2
64MX16 PC800 FBGA Ind. Temp |
MT47H64M16NF-25E
IT:M |
Micron |
4000 @ |
Call |
4 days |
|
DDR1-400 |
|||||
|
DDR
16Mx16 PC400 PB free FBGA |
H5DU2562GFR-E3CR |
Hynix |
18000 @ |
Call |
2 days |
|
DDR
16Mx16 PC400 Pb Free |
MT46V16M16P-5B:M |
Micron |
10000 @ |
USD1.40 |
3 days |
|
SDRAM- PC166 |
|||||
|
SD
16Mx16 PC166 Pb Free Ind. Temp |
MT48LC16M16A2P-6A
IT:G |
Micron |
4000 @ |
Call |
4 days |
|
SD
8Mx16-6 PC166 Pb Free |
MT48LC8M16A2P-6A:L |
Micron |
4000 @ |
Call |
3 days |
|
SD
8Mx16-6 PC166 Pb Free Ind temp |
MT48LC8M16A2P-6A
IT:L |
Micron |
10000 @ |
Call |
5 days |
Module
|
DDR4 Module 288pins PC2400 |
|||||
|
DDR4
2Gx72 ECC Reg PC2400 (16GB) |
M393A2K40BB1-CRC |
Samsung
Orig [2Gx4 18C] |
500 @ |
Call |
2 days |
|
DDR4
1Gx72 ECC Reg PC2400 (8GB) |
M393A1G43EB1-CRC |
Samsung
Orig [512Mx8 18C] |
200 @ |
Call |
2 days |
|
DDR4 Module 288pins PC2133 |
|||||
|
DDR4
512Mx64 PC2133 (4GB) |
CT4G4DFS8213 |
Crucial
Original / Retail [512Mx8 8C] |
500 @ |
Call |
4 days |
|
DDR4 SO DIMM 260pin |
|||||
|
DDR4
PC2400 SO-DIMM 512Mx64 (4GB) |
M471A5143EB1-CRC |
Samsung
Orig [512Mx8 8C] |
900 @ |
USD38.50 |
1 day |
|
DDR3 Module 240 pins ECC/Reg 1600
(PC3-12800) |
|||||
|
DDR3
1Gx72 ECC Reg PC1600 (8GB) |
M393B1G70EB0-YK0 |
Samsung
Orig [512x4 36C] |
500 @ |
USD95.00 |
5 days |
|
DDR3 Module 240 pins ECC/Reg 1333
(PC3-10600) |
|||||
|
DDR3
1Gx72 ECC Reg PC1333 (8GB) |
M393B1K70DH0-CH9 |
Samsung
Orig [512Mx4 36C] |
100 @ |
Call |
3 days |
|
DDR3 SO-DIMM 204 pins |
|||||
|
DDR3
PC1600 SO-DIMM 1Gx64 LV (8GB) |
M471B1G73EB0-YK0 |
Samsung
Orig [512Mx8 16C] |
1125 @ |
USD75.50 |
2 days |
|
DDR3
PC1600 SO-DIMM 1Gx64 (8GB) |
HMT41GS6BFR8A-PBN0 |
Hynix
Orig [512Mx8 16C] |
1000 @ |
Call |
2 days |
|
DDR3
PC1600 SO-DIMM 512Mx64 LV (4GB) |
M471B5173EB0-YK0 |
Samsung
Orig [512Mx8 8C] |
1050 @ |
USD36.50 |
1 day |
|
DDR3
PC1600 SO-DIMM 512Mx64 LV (4GB) |
M471B5173DB0-YK0 |
Samsung
Orig [512Mx8 8C] |
900 @ |
USD38.50 |
3 days |
SSD & Card
|
Flash Solid-State Disk |
|||||
|
600GB
SSD DC S3500 Series SATA 2.5" 7mm 6Gb/s MLC 20nm |
SSDSC2BB600G401 |
Intel
/ Bulk |
100 @ |
Call |
3 days |
|
MicroSD Card (Trans-Flash) |
|||||
|
32GB
TransFlash Card (Micro SDHC) CL4 w/o logo Generic |
SDSDQAD-032G-05 |
SanDisk
/ Bulk |
10000 @ |
Call |
3 days |
|
32GB
TransFlash Card (Micro SDHC) Class4 |
SD-C32G2B1A |
Toshiba
/ Bulk |
36000 @ |
Call |
3 days |
|
16GB
TransFlash Card C10 (Micro SDHC) UHS-I w/o logo Generic |
SDSDQAD-016G-05 |
SanDisk
/ Bulk |
8000 @ |
Call |
3 days |
|
16GB
TransFlash Card (Micro SDHC) Class4 |
SD-C16G2B1A |
Toshiba
/ Bulk |
28800 @ |
Call |
1 day |
|
Secure Digital Card |
|||||
|
16GB
Secure Digital Card SDHC Class 10 |
SD10VG2/16GB |
Kingston
/ Retail |
-- @ |
Call |
2 days |